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Schottky diodes Introduction
2018-4-29
A Schottky diode principle
Schottky diode is a noble metal (gold, silver, aluminum, platinum, etc.) A positive electrode to the negative electrode B is N-type semiconductor, the use of both the contact surface formed on the barrier having a rectifying property and made mostly - the semiconductor device . Since the N-type semiconductor there are a lot of electrons, only a very small amount of noble metal free electrons, so the diffusion of A in a low concentration to a high concentration of B in the electron begins. Obviously, there is no hole in the metal A, there would be no hole diffusion movement from A to B is. As electronic continued to spread from B to A, B surface electron density surface gradually drop Ministry of Light Industry, electrically neutral surface is damaged, so they form a barrier, its electric field direction B → A. However, under the electric field, A electrons will drift movement from A → B, thus weakening the electric field formed by diffusion movement. After establishing a certain width of space charge region, the electric field-induced electron drift motion and different concentrations to achieve a relatively balanced exercise-induced electron diffusion, they formed a Schottky barrier.

A typical Schottky rectifier is an N-type semiconductor is a substrate, on top of arsenic as a dopant N- epitaxial layer is formed. Anode (blocking layer) is molybdenum metal material. Silicon dioxide (SiO2) is used to eliminate the edge area of the electric field, increase the tube voltage value. N-type substrate having a small on-state resistance, dopant concentration higher than 100% H- layer fold. Formed in the substrate below the N + cathode layer, whose role is to reduce the contact resistance of the cathode. By adjusting the structure parameters, between the substrate and the anode metal forming suitable Schottky barrier, when coupled with a positive bias E, the metal A and N-type substrate B respectively, then the power of positive and negative, then the potential Wo barrier width narrows. -E Plus negative bias, the barrier width increases.

In summary, the Schottky rectifier structure principle and the PN junction rectifiers big difference usually called a PN junction rectifier junction rectifier, while the metal - half pipe called a Schottky rectifier rectifier In recent years, the use of silicon planar aluminum-silicon Schottky diode manufacturing process has come out, which not only saves precious metals, significantly reduce costs, but also improves the consistency of the parameters.

Schottky rectifier only a carrier (electron) transporting charge, there is no excess accumulation of minority carriers in the outer side of the barrier, and therefore, the charge storage problems (Qrr → 0) does not exist, so that switching characteristics obtained when significant improvement. Reverse recovery time can be shortened to less than has been 10ns. But it's the reverse voltage value is low, usually no more than to go when 100V. Therefore suitable for working in low voltage, high current situation. This use of its low pressure drop characteristics, can improve the efficiency of low voltage, high current rectifier (or wheeling) circuit.

Second, the Schottky diode structure
Schottky diodes in the structure will be of great difference with PN junction diode, its interior is composed of an anode metal (aluminum barrier layer of molybdenum or other materials), silicon dioxide (SiO2) electric field to eliminate materials, N- an epitaxial layer (arsenic materials), N-type silicon substrate, N + cathode layer and the cathode metal or the like. Between the N-type substrate and the anode metal forms a Schottky barrier. When the Schottky barrier ends with a positive bias (anode metal cathode connected to the power supply, N-type substrate connected to the negative power supply), the Schottky barrier layer is narrowed, its resistance becomes smaller; on the contrary, if In the Schottky barrier when a reverse bias is applied across, the Schottky barrier layer is widened, the internal resistance becomes large.

Schottky diode into leaded and surface mount (SMD) packages.
A leaded package Schottky diodes are usually used as high-frequency rectifier diode, freewheeling diode or protection diodes to use. It has a single-tube and tube (dual diode) type packages.

Schottky (two tubes connected to the negative) on the tube have common cathode, anode (positive electrode is connected to two tubes) and series (a diode is connected to another positive anode diode) three-pin lead the way.

Using surface mount Schottky diode with a single tube, a variety of packages and three twin-tube tube type.

Third, the Schottky diode detector

Schottky (Schottky) diodes, also known as a Schottky barrier diode (referred to as SBD), which is a low-power, ultra high-speed semiconductor devices are widely used in switching power supplies, inverters, drives and other circuits for high-frequency, low voltage, high current rectifier diode, freewheeling diodes, protection diodes use, or as a rectifier diode in microwave communications circuits, small signal detector diodes use.

In general, the testing include: ① identifying electrode; ② Check-way conductivity tube; ③ measuring the forward voltage drop VF; ④ measuring the reverse breakdown voltage VBR.
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